Design and Simulation of Capacitive RF MEMS Switches using Tuned Dual Beam
نویسندگان
چکیده
A low actuation voltage RF MEMS shunt capacitive switch has been designed and simulated for use in X-band (8-12GHz) applications. The MEMS switch is a freely moving membrane over coplanar waveguide. Double meander structure of tuned dual beam is used here to improve the isolation of switch. Actuation is achieved by using electrostatic mechanism because of its low power consumption, small size and less switching time. Simulation using CoventorWare shows that the actuation voltage for switch is 4.8V to 5.2V and up-state and downstate capacitance of 38fF and 3pF respectively. Spring constant for beam is 3.57N/m. HFSS simulation reveals that insertion loss is in the range of 0.01-0.02dB and up-state return loss better than -15dB in Xband. The switch offers a down-state isolation of 50dB at 10GHz.
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